PART |
Description |
Maker |
6N40 6N40L-TF3-T 6N40G-TF3-T |
6 Amps, 400 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
UF730L-TN3-R UF730L-TA3-T UF730L-TF3-T UF730G-TN3- |
5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
2N40L-TA3-T 2N40G-TA3-T |
2 Amps, 400 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
NTP85N03 NTB85N03 NTB85N03T4 |
Power MOSFET 85 Amps / 28 Volts Power MOSFET 85 Amps, 28 Volts N-Channel TO-220(85A,28V,N通道,TO-220封装的功率MOSFET)
|
ONSEMI[ON Semiconductor]
|
RM912 |
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz) CDMA/AMPS 3-4 Volt Power Amplifier (824?849 MHz)
|
ETC Conexant Systems, Inc
|
MTB2P50ET4 MTB2P50ET4G MTB2P50E |
Power MOSFET 2 Amps, 500 Volts(2A, 500V功率MOSFET) 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK
|
ON Semiconductor
|
SFA60PME SFA40PME SFA50PME |
68 AMPS 400 - 600 VOLTS 40 nsec HYPER FAST PDSITIVE CENTERTAP RECTIFIER 6 A, 400 V, SILICON, RECTIFIER DIODE, TO-254AA
|
Solid States Devices, Inc. Solid State Devices, Inc.
|
MMDF3N03HDR2 MMDF3N03HD MMDF3N03HD-D |
Power MOSFET 3 Amps, 30 Volts 4.1 A, 30 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET 3 Amps, 30 Volts N-Channel SO-8, Dual
|
ONSEMI[ON Semiconductor]
|
IRF9Z34-001PBF IRF9543-003PBF IRF9543-005PBF IRF95 |
18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET 16 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET 3 A, 80 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 9.7 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET 2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET 2.1 A, 1000 V, 6.7 ohm, N-CHANNEL, Si, POWER, MOSFET 2.8 A, 800 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET 19 A, 80 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET 7 A, 450 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET 1.7 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Vishay Intertechnology, Inc. Intersil, Corp. VISHAY INTERTECHNOLOGY INC
|
2SC2356 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT From old datasheet system
|
Fujitsu Component Limited. FUJITSU[Fujitsu Media Devices Limited]
|
NTD18N06-1G NTD18N06L-001 NTD18N06G |
Power MOSFET 18 Amps, 60 Volts 18 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, CASE 369D-01, DPAK-3
|
ON Semiconductor
|
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